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Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
FEATURES
* 'Trench' technology * Very low on-state resistance * Fast switching * Low thermal resistance
g
PSMN030-150B
QUICK REFERENCE DATA
d
SYMBOL
VDSS = 150 V ID = 55.5 A RDS(ON) 30 m
s
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:* d.c. to d.c. converters * switched mode power supplies The PSMN030-150B is supplied in the SOT404 (D2PAK) Surface mounted package.
PINNING - SOT404
PIN 1 2 3 mb gate drain (no connection possible) source drain DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2 1 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 C to 175C Tj = 25 C to 175C; RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 150 150 20 55.5 39 222 250 175 UNIT V V V A A A W C
December 2000
1
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS IAS Non-repetitive avalanche energy Non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 35 A; tp = 100 s; Tj prior to avalanche = 25C; VDD 50 V; RGS = 50 ; VGS = 10 V;
PSMN030-150B
MIN. -
MAX. 300 35
UNIT mJ A
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS TYP. Minimum footprint, FR4 board 50 MAX. 0.6 UNIT K/W K/W
ELECTRICAL CHARACTERISTICS
Tj= 25C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ls Ciss Coss Crss Drain-source breakdown voltage Gate threshold voltage CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55C VDS = VGS; ID = 1 mA Tj = 175C Tj = -55C Drain-source on-state VGS = 10 V; ID = 25 A resistance Gate source leakage current VGS = 10 V; VDS = 0 V Zero gate voltage drain VDS = 150 V; VGS = 0 V; current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance Tj = 175C Tj = 175C MIN. 150 133 2.0 1.0 TYP. MAX. UNIT 3.0 24 2 0.05 98 16 38 18 71 97 76 3.5 7.5 3680 470 220 4.0 6 30 81 100 10 500 50 V V V V V m m nA A A nC nC nC ns ns ns ns nH nH pF pF pF
ID = 55.5 A; VDD = 120 V; VGS = 10 V
VDD = 75 V; RD = 1.5 ; VGS = 10 V; RG = 5.6 Resistive load Measured from tab to centre of die Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz
December 2000
2
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 25 A; VGS = 0 V IF = 20 A; -dIF/dt = 100 A/s; VGS = 0 V; VR = 30 V -
PSMN030-150B
TYP. MAX. UNIT 0.85 109 610 55.5 222 1.2 A A V ns nC
December 2000
3
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
PSMN030-150B
Normalised Power Derating, PD (%) 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 Mounting Base temperature, Tmb (C) 150 175
1
Transient thermal impedance, Zth j-mb (K/W) D = 0.5 0.2
0.1
0.1 0.05 0.02 P D D = tp/T
0.01 single pulse
tp
T 0.001 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
Pulse width, tp (s)
Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tmb)
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
Normalised Current Derating, ID (%) 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 Mounting Base temperature, Tmb (C) 150 175
70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 0
Drain Current, ID (A)
Tj = 25 C VGS = 10 V 6V 8V 5.4 V 5.2 V 5V 4.8 V 4.6 V 4.4 V
0.2
0.4
0.6 0.8 1 1.2 1.4 Drain-Source Voltage, VDS (V)
1.6
1.8
2
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb)
Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS
1000
Peak Pulsed Drain Current, IDM (A) RDS(on) = VDS/ ID 0.07 0.06 0.05 100 us 0.04 0.03 0.02 0.01 0 1 10 100 Drain-Source Voltage, VDS (V) 1000 0 5 10 15 20 25 30 Drain Current, ID (A) 35 40 45 50 8V 5.4 V 6V VGS = 10V Drain-Source On Resistance, RDS(on) (Ohms) 4.4 V 4.6 V V 4.8 V 5V 5.2 V Tj = 25 C
100
tp = 10 us
10
D.C.
1 ms 10 ms 100 ms
1
Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(VGS)
December 2000
4
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
PSMN030-150B
Drain current, ID (A) 50 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate-source voltage, VGS (V) 175 C Tj = 25 C VDS > ID X RDS(ON)
4.5 4 3.5 3 2.5 2 1.5 1 0.5 0
Threshold Voltage, VGS(TO) (V) maximum typical
minimum
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Junction Temperature, Tj (C)
Fig.7. Typical transfer characteristics. ID = f(VGS); parameter Tj
Transconductance, gfs (S) VDS > ID X RDS(ON) Tj = 25 C
Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
55 50 45 40 35 30 25 20 15 10 5 0
1.0E-01
Drain current, ID (A)
1.0E-02
175 C
1.0E-03
minimum typical
1.0E-04 maximum 1.0E-05
1.0E-06
0 5 10 15 20 25 30 35 Drain current, ID (A) 40 45 50
0
0.5
1 1.5 2 2.5 3 3.5 Gate-source voltage, VGS (V)
4
4.5
5
Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID)
Fig.11. Sub-threshold drain current. ID = f(VGS); Tj = 25 C
Normalised On-state Resistance 2.9 2.7 2.5 2.3 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Junction temperature, Tj (C)
Capacitances, Ciss, Coss, Crss (pF) 10000 Ciss
1000
Coss Crss 100 0.1 1 10 Drain-Source Voltage, VDS (V) 100
Fig.9. Normalised drain-source on-state resistance. RDS(ON)/RDS(ON)25 C = f(Tj)
Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
December 2000
5
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
PSMN030-150B
Maximum Avalanche Current, IAS (A)
Gate-source voltage, VGS (V) 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Gate charge, QG (nC)
VDD = 30 V ID = 55.5A Tj = 25 C
100
25 C
VDD =120 V
10 Tj prior to avalanche = 150 C
1 0.001
0.01
0.1 Avalanche time, tAV (ms)
1
10
Fig.13. Typical turn-on gate-charge characteristics VGS = f(QG)
Fig.15. Maximum permissible non-repetitive avalanche current (IAS) versus avalanche time (tAV); unclamped inductive load
Source-Drain Diode Current, IF (A) 50 45 40 35 30 25 20 15 10 5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Source-Drain Voltage, VSDS (V) 175 C Tj = 25 C VGS = 0 V
Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
December 2000
6
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
MECHANICAL DATA
Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped)
PSMN030-150B
SOT404
A E A1 mounting base
D1
D
HD
2
Lp
1
3
b c Q
e
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 2.54 Lp 2.90 2.10 HD 15.40 14.80 Q 2.60 2.20
OUTLINE VERSION SOT404
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 98-12-14 99-06-25
Fig.16. SOT404 surface mounting package. Centre pin connected to mounting base. Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8".
December 2000
7
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
PSMN030-150B
9.0
17.5 2.0
3.8
5.08
Fig.17. SOT404 : soldering pattern for surface mounting.
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
December 2000
8
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
PSMN030-150B
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
December 2000
9
Rev 1.000

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